13.5 nm Light Source
A laser-produced plasma source strikes 50,000 tin droplets per second and delivers 250 W of in-band EUV power to the scanner.
NIMBUS NX-1 · EUV LITHOGRAPHY · SERIES 2026
Print the microchip revolution at 13.5 nanometers.
The NX-1 EUV scanner patterns sub-8 nm features across 300 mm wafers at 200 wafers per hour — with overlay accuracy your metrology team will actually believe.
WAVELENGTH13.5 NM
RESOLUTION≤ 8 NM
THROUGHPUT200 WPH
SOURCEWAFER · 13.5 NM
01 / CAPABILITIES
Machined for nanometer certainty.
All-Mirror Optics Chain
Eleven molybdenum–silicon multilayer mirrors steer the beam through high vacuum, holding aberration under 1.2 nm across the field.
Maglev Wafer Stage
A magnetically levitated stage accelerates at 4 g and settles in milliseconds, stitching fields with sub-2 nm overlay at full rate.
02 / PROCESS
From tin droplet to transistor.
01
Ignite
A 30 kW drive laser vaporizes molten tin droplets 50,000 times a second; the plasma radiates 13.5 nm EUV light.
02
Steer
Multilayer mirrors fold the beam eleven times through a vacuum cavity, projecting the reticle at 4× reduction.
03
Expose
The maglev stage scans wafer after wafer, printing ≤8 nm features with overlay matched below 1.5 nm.
03 / FIELD REPORTS
Fabs that bet on 13.5 nm.
“The NX-1 hit its overlay spec during qualification week. Our defectivity team spent a month looking for the catch.”
“We moved two nodes in a single generation — and the stability data NIMBUS publishes is the data we measure on our own floor.”
“Resident engineers who speak scatterometry fluently. Downtime gets scheduled around our coffee breaks, not theirs.”
04 / CONFIGURATIONS
Own the line that prints the future.
NX-120 · PILOT
$148M per tool
- ≤11 nm resolution
- 120 WPH rated throughput
- 3-year source coverage
- Standard bay installation
NX-200 · PRODUCTION
$196M per tool
- ≤8 nm resolution
- 200 WPH rated throughput
- 4-year optics service contract
- Critical spares within 12 h
- On-site resident engineer
NX-300 · HIGH-VOLUME
$342M per tool
- ≤8 nm, dual-source redundancy
- 240 WPH rated throughput
- 24/7 mission-critical support
- Inline metrology suite
05 / FAQ
Engineering questions, straight answers.
What wavelength does the NX-1 expose at?
13.5 nm extreme ultraviolet. A 30 kW CO₂ drive laser vaporizes tin droplets to ignite the plasma, and the entire path from source to wafer runs in high vacuum with all-reflective optics.
What does installation require?
A vibration-isolated bay of roughly 45 m × 10 m, about 1 MW of conditioned power, and ultra-high-purity nitrogen. NIMBUS crews handle rigging, hookup, and qualification.
How fast can we reach production wafers?
Most fabs expose first production wafers within 12 weeks of chassis set, supported by a resident engineer through ramp and a 12-hour critical-spares program.
06 / CAPACITY
Reserve a 2026 installation slot.
NX line capacity is allocated quarterly. Tell us where your process team can be reached.